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Study of carrier recombination at structural defects in InGaN films

Cremades, A. / Piqueras, J.

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Study of carrier recombination at structural defects in InGaN films

Cremades, A. / Piqueras, J.

Study of carrier recombination at structural defects in InGaN films

Cremades, A. / Piqueras, J.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Study of carrier recombination at structural defects in InGaN films

Contributors:

Cremades, A. (author) / Piqueras, J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 341 - 344

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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