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On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers
On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers
On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers
Kowalski, G. (author) / Frymark, I. (author) / Krotkus, A. (author) / Bertulis, K. (author) / Kaminska, M. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 449 - 452
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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