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    High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates

    New search for: Xiong, Y. Z.
    New search for: Fu, J. S.
    New search for: Wang, H.
    New search for: Ng, G. I.
    New search for: Radhakrishnan, K.

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    High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates

    New search for: Xiong, Y. Z.
    New search for: Fu, J. S.
    New search for: Wang, H.
    New search for: Ng, G. I.
    New search for: Radhakrishnan, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates

    New search for: Xiong, Y. Z.
    New search for: Fu, J. S.
    New search for: Wang, H.
    New search for: Ng, G. I.
    New search for: Radhakrishnan, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates

    Contributors:

    Xiong, Y. Z. (author) / Fu, J. S. (author) / Wang, H. (author) / Ng, G. I. (author) / Radhakrishnan, K. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 647-649

    Publication date:

    2001-01-01

    Size:

    3 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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