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Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers
Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers
Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers
Yuan, K. (author) / Radhakrishnan, K. (author) / Zheng, H. Q. (author) / Yoon, S. F. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 641-645
2001-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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|Single crystal growth of compositionally graded InXGa1-XAs
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