Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001): Fid-Bau Portal

Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)

Nakamura, T. / Matsumoto, S. / Horibe, T. / Satoh, M.

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Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)

Nakamura, T. / Matsumoto, S. / Horibe, T. / Satoh, M.

Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)

Nakamura, T. / Matsumoto, S. / Horibe, T. / Satoh, M.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)

Contributors:

Nakamura, T. (author) / Matsumoto, S. (author) / Horibe, T. (author) / Satoh, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 839-842

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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