A platform for research: civil engineering, architecture and urbanism
Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
Phelps, G. J. (author) / Wright, N. G. (author) / Chester, E. G. (author) / Johnson, C. M. (author) / O Neill, A. G. (author) / Ortolland, S. (author) / Horsfall, A. B. (author) / Vassilevski, K. (author) / Gwilliam, R. M. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 855-858
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Boron Diffusion in Silicon Carbide
British Library Online Contents | 2013
|Dopant Diffusion and Stacking Fault in Silicon During Thermal Oxidation
British Library Online Contents | 1995
|British Library Online Contents | 2009
|Stress effects on defects and dopant diffusion in Si
British Library Online Contents | 2001
|Modeling of Boron Diffusion in Silicon Carbide
British Library Online Contents | 2001
|