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    4H-SiC Delta-Doped Accumulation-Channel MOS FET

    New search for: Yokogawa, T.
    New search for: Takahashi, K.
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    New search for: Kitabatake, M.

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    4H-SiC Delta-Doped Accumulation-Channel MOS FET

    New search for: Yokogawa, T.
    New search for: Takahashi, K.
    New search for: Kusumoto, O.
    New search for: Uchida, M.
    New search for: Yamashita, K.
    New search for: Kitabatake, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    4H-SiC Delta-Doped Accumulation-Channel MOS FET

    New search for: Yokogawa, T.
    New search for: Takahashi, K.
    New search for: Kusumoto, O.
    New search for: Uchida, M.
    New search for: Yamashita, K.
    New search for: Kitabatake, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
    Title:

    4H-SiC Delta-Doped Accumulation-Channel MOS FET

    Contributors:

    Yokogawa, T. (author) / Takahashi, K. (author) / Kusumoto, O. (author) / Uchida, M. (author) / Yamashita, K. (author) / Kitabatake, M. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 1077-1080

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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