Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations: Fid-Bau Portal

Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

Kang, I. H. / Bahng, W. / Kim, S. C. / Joo, S. J. / Kim, N. K.

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Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

Kang, I. H. / Bahng, W. / Kim, S. C. / Joo, S. J. / Kim, N. K.

Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

Kang, I. H. / Bahng, W. / Kim, S. C. / Joo, S. J. / Kim, N. K.

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Title:

Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

Contributors:

Kang, I. H. (author) / Bahng, W. (author) / Kim, S. C. (author) / Joo, S. J. (author) / Kim, N. K. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Published in:

Silicon Carbide and Related Materials 2006 ; 823-826

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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