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    4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

    New search for: Wahab, Q.
    New search for: Kosugi, H.
    New search for: Yano, H.
    New search for: Hallin, C.
    New search for: Kimoto, T.
    New search for: Matsunami, H.

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    4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

    New search for: Wahab, Q.
    New search for: Kosugi, H.
    New search for: Yano, H.
    New search for: Hallin, C.
    New search for: Kimoto, T.
    New search for: Matsunami, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

    New search for: Wahab, Q.
    New search for: Kosugi, H.
    New search for: Yano, H.
    New search for: Hallin, C.
    New search for: Kimoto, T.
    New search for: Matsunami, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

    Contributors:

    Wahab, Q. (author) / Kosugi, H. (author) / Yano, H. (author) / Hallin, C. (author) / Kimoto, T. (author) / Matsunami, H. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 1215-1218

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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