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The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
Fujisawa, H. (author) / Tsuji, T. (author) / Nishiura, M. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1297-1300
MATERIALS SCIENCE FORUM ; 527/529
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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