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Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions
Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions
Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions
Nakagomi, S. (author) / Shinobu, H. (author) / Uneus, L. (author) / Lundstrom, I. (author) / Ekedahl, L.-G. (author) / Yakimova, R. (author) / Syvajarvi, M. (author) / Henry, A. (author) / Janzen, E. (author) / Spetz, A. L. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 1423-1426
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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