Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth: Fid-Bau Portal

Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth

Kato, T. / Oyanagi, N. / Kitou, Y. / Nishizawa, S. / Arai, K.

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Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth

Kato, T. / Oyanagi, N. / Kitou, Y. / Nishizawa, S. / Arai, K.

Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth

Kato, T. / Oyanagi, N. / Kitou, Y. / Nishizawa, S. / Arai, K.

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Document information

Title:

Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth

Contributors:

Kato, T. (author) / Oyanagi, N. (author) / Kitou, Y. (author) / Nishizawa, S. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 111-114

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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