Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC Epilayers: Fid-Bau Portal

Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC Epilayers

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K.

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Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC Epilayers

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K.

Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC Epilayers

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K.

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Document information

Title:

Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC Epilayers

Contributors:

Tsuchida, H. (author) / Kamata, I. (author) / Jikimoto, T. (author) / Izumi, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 171-174

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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