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HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

Kallinger, B. / Ehlers, C. / Berwian, P. / Rommel, M. / Friedrich, J.

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HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

Kallinger, B. / Ehlers, C. / Berwian, P. / Rommel, M. / Friedrich, J.

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

Kallinger, B. / Ehlers, C. / Berwian, P. / Rommel, M. / Friedrich, J.

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Order at Subito €

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Document information

Title:

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

Contributors:

Kallinger, B. (author) / Ehlers, C. (author) / Berwian, P. (author) / Rommel, M. (author) / Friedrich, J. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 210-213

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Ellison, A. / Kimoto, T. / Ivanov, I. G. et al. | British Library Online Contents | 1998

Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC Epilayers

Tsuchida, H. / Kamata, I. / Jikimoto, T. et al. | British Library Online Contents | 2002

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V~B~R> 4 kV

Thomas, B. / Hecht, C. / Kallinger, B. | British Library Online Contents | 2009

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

Mahadik, N.A. / Stahlbush, R.E. / Caldwell, J.D. et al. | British Library Online Contents | 2012

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

Miyazawa, T. / Ito, M. / Tsuchida, H. | British Library Online Contents | 2011