A platform for research: civil engineering, architecture and urbanism
Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
Pernot, E. (author) / Neyret, E. (author) / Moulin, C. (author) / Pernot-Rejmankova, P. (author) / Templier, F. (author) / Di Cioccio, L. (author) / Billon, T. (author) / Madar, R. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 419-422
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2003
|EBIC investigation of defects in SOI materials using a Schottky diode and buried oxide capacitor
British Library Online Contents | 1997
|British Library Conference Proceedings | 1996
|Synchrotron topography characterization of ZnTe single crystals
British Library Online Contents | 1994
|Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors
British Library Online Contents | 2011
|