Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy

Anwand, W. / Brauer, G. / Skorupa, W. | British Library Online Contents | 2001

Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering

Anwand, W. / Brauer, G. / Coleman, P.G. et al. | British Library Online Contents | 1999

Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy

Barthe, M.-F. / Desgardin, P. / Henry, L. et al. | British Library Online Contents | 2002

Characterization of vacancy-like defects in boron-implanted silicon with slow positrons

Gebauer, J. / Eichler, S. / Krause-Rehberg, R. et al. | British Library Online Contents | 1997

Vacancy-mediated ferromagnetism in Co-implanted ZnO studied using a slow positron beam

Wang, D. D. / Zhao, B. / Qi, N. et al. | British Library Online Contents | 2017