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Electron traps created in n-type GaN during 25 keV hydrogen implantation

Auret, F. D. / Meyer, W. E. / Goodman, S. A. / Hayes, M. / Legodi, M. J. / Beaumont, B. / Gibart, P.

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Electron traps created in n-type GaN during 25 keV hydrogen implantation

Auret, F. D. / Meyer, W. E. / Goodman, S. A. / Hayes, M. / Legodi, M. J. / Beaumont, B. / Gibart, P.

Electron traps created in n-type GaN during 25 keV hydrogen implantation

Auret, F. D. / Meyer, W. E. / Goodman, S. A. / Hayes, M. / Legodi, M. J. / Beaumont, B. / Gibart, P.

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Document information

Title:

Electron traps created in n-type GaN during 25 keV hydrogen implantation

Contributors:

Auret, F. D. (author) / Meyer, W. E. (author) / Goodman, S. A. (author) / Hayes, M. (author) / Legodi, M. J. (author) / Beaumont, B. (author) / Gibart, P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 93 ; 6 - 9

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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