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    Localization effects in InGaAsN multi-quantum well structures

    New search for: Hoffmann, A.
    New search for: Heitz, R.
    New search for: Kaschner, A.
    New search for: Luttgert, T.
    New search for: Born, H.
    New search for: Egorov, A. Y.
    New search for: Riechert, H.

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    Localization effects in InGaAsN multi-quantum well structures

    New search for: Hoffmann, A.
    New search for: Heitz, R.
    New search for: Kaschner, A.
    New search for: Luttgert, T.
    New search for: Born, H.
    New search for: Egorov, A. Y.
    New search for: Riechert, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Localization effects in InGaAsN multi-quantum well structures

    New search for: Hoffmann, A.
    New search for: Heitz, R.
    New search for: Kaschner, A.
    New search for: Luttgert, T.
    New search for: Born, H.
    New search for: Egorov, A. Y.
    New search for: Riechert, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Localization effects in InGaAsN multi-quantum well structures

    Contributors:

    Hoffmann, A. (author) / Heitz, R. (author) / Kaschner, A. (author) / Luttgert, T. (author) / Born, H. (author) / Egorov, A. Y. (author) / Riechert, H. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 93 ; 55 - 59

    Publication date:

    2002-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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