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Mechanism of current leakage through metal/n-GaN interfaces

Oyama, S. / Hashizume, T. / Hasegawa, H.

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Mechanism of current leakage through metal/n-GaN interfaces

Oyama, S. / Hashizume, T. / Hasegawa, H.

Mechanism of current leakage through metal/n-GaN interfaces

Oyama, S. / Hashizume, T. / Hasegawa, H.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Mechanism of current leakage through metal/n-GaN interfaces

Contributors:

Oyama, S. (author) / Hashizume, T. (author) / Hasegawa, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 190 ; 322-325

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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