Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC: Fid-Bau Portal

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

Sometani, M. / Okamoto, D. / Harada, S. / Ishimori, H. / Takasu, S. / Hatakeyama, T. / Takei, M. / Yonezawa, Y. / Fukuda, K. / Okumura, H.

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Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

Sometani, M. / Okamoto, D. / Harada, S. / Ishimori, H. / Takasu, S. / Hatakeyama, T. / Takei, M. / Yonezawa, Y. / Fukuda, K. / Okumura, H.

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

Sometani, M. / Okamoto, D. / Harada, S. / Ishimori, H. / Takasu, S. / Hatakeyama, T. / Takei, M. / Yonezawa, Y. / Fukuda, K. / Okumura, H.

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Document information

Title:

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

Contributors:

Sometani, M. (author) / Okamoto, D. (author) / Harada, S. (author) / Ishimori, H. (author) / Takasu, S. (author) / Hatakeyama, T. (author) / Takei, M. (author) / Yonezawa, Y. (author) / Fukuda, K. (author) / Okumura, H. (author)

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 579-582

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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