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    Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

    New search for: Hasegawa, H.
    New search for: Kodama, S.
    New search for: Ikeya, K.
    New search for: Fujikura, H.

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    Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

    New search for: Hasegawa, H.
    New search for: Kodama, S.
    New search for: Ikeya, K.
    New search for: Fujikura, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

    New search for: Hasegawa, H.
    New search for: Kodama, S.
    New search for: Ikeya, K.
    New search for: Fujikura, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

    Contributors:

    Hasegawa, H. (author) / Kodama, S. (author) / Ikeya, K. (author) / Fujikura, H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 117/118 ; 710-713

    Publication date:

    1997-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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