Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation: Fid-Bau Portal

Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation

Liszkay, L. / Kajcsos, Z. / Barthe, M. F. / Desgardin, P. / Hackbarth, T. / Herzog, H. J. / Hollander, B. / Mantl, S.

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Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation

Liszkay, L. / Kajcsos, Z. / Barthe, M. F. / Desgardin, P. / Hackbarth, T. / Herzog, H. J. / Hollander, B. / Mantl, S.

Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation

Liszkay, L. / Kajcsos, Z. / Barthe, M. F. / Desgardin, P. / Hackbarth, T. / Herzog, H. J. / Hollander, B. / Mantl, S.

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Document information

Title:

Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation

Contributors:

Liszkay, L. (author) / Kajcsos, Z. (author) / Barthe, M. F. (author) / Desgardin, P. (author) / Hackbarth, T. (author) / Herzog, H. J. (author) / Hollander, B. (author) / Mantl, S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 194 ; 136-139

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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