H+ implantation-enhanced stress relaxation in c-Si1-xGex on SiO2 during oxidation-induced Ge condensation process: Fid-Bau Portal

H+ implantation-enhanced stress relaxation in c-Si1-xGex on SiO2 during oxidation-induced Ge condensation process

Sadoh, T. / Matsuura, R. / Ninomiya, M. / Nakamae, M. / Enokida, T. / Hagino, H. / Miyao, M.

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H+ implantation-enhanced stress relaxation in c-Si1-xGex on SiO2 during oxidation-induced Ge condensation process

Sadoh, T. / Matsuura, R. / Ninomiya, M. / Nakamae, M. / Enokida, T. / Hagino, H. / Miyao, M.

H+ implantation-enhanced stress relaxation in c-Si1-xGex on SiO2 during oxidation-induced Ge condensation process

Sadoh, T. / Matsuura, R. / Ninomiya, M. / Nakamae, M. / Enokida, T. / Hagino, H. / Miyao, M.

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Document information

Title:

H+ implantation-enhanced stress relaxation in c-Si1-xGex on SiO2 during oxidation-induced Ge condensation process

Contributors:

Sadoh, T. (author) / Matsuura, R. (author) / Ninomiya, M. (author) / Nakamae, M. (author) / Enokida, T. (author) / Hagino, H. (author) / Miyao, M. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 167-170

Publication date:

2005-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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