Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD

Hsiao, H.L. / Shieh, Y.Y. / Lee, R.S. et al. | British Library Online Contents | 1999

Electrical and photoconductive properties of boron-doped polycrystalline diamond films

Zhang, W. / Hu, B. / Xie, E. et al. | British Library Online Contents | 1995

Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

Kang, M.-Y. / Yamamoto, T. / Matsui, T. et al. | British Library Online Contents | 1996

Influence of growth pressure on the electrical properties of boron-doped polycrystalline diamond films

Wang, Z. L. / Lu, C. / Li, J. J. et al. | British Library Online Contents | 2009

Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films

Kallel, S. / Semmache, B. / Lemiti, M. et al. | British Library Online Contents | 1998