Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD: Fid-Bau Portal

Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD

Hsiao, H.L. / Shieh, Y.Y. / Lee, R.S. / Wang, R.Y. / Wang, K.C. / Hwang, H.L. / Yang, A.B.

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Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD

Hsiao, H.L. / Shieh, Y.Y. / Lee, R.S. / Wang, R.Y. / Wang, K.C. / Hwang, H.L. / Yang, A.B.

Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD

Hsiao, H.L. / Shieh, Y.Y. / Lee, R.S. / Wang, R.Y. / Wang, K.C. / Hwang, H.L. / Yang, A.B.

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Title:

Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD

Contributors:

Hsiao, H.L. (author) / Shieh, Y.Y. (author) / Lee, R.S. (author) / Wang, R.Y. (author) / Wang, K.C. (author) / Hwang, H.L. (author) / Yang, A.B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 142 ; 400-406

Publication date:

1999-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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