Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds

    New search for: Bousbih, F.
    New search for: Bouzid, S. B.
    New search for: Chtourou, R.
    New search for: Charfi, F. F.
    New search for: Harmand, J. C.
    New search for: Ungaro, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds

    New search for: Bousbih, F.
    New search for: Bouzid, S. B.
    New search for: Chtourou, R.
    New search for: Charfi, F. F.
    New search for: Harmand, J. C.
    New search for: Ungaro, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds

    New search for: Bousbih, F.
    New search for: Bouzid, S. B.
    New search for: Chtourou, R.
    New search for: Charfi, F. F.
    New search for: Harmand, J. C.
    New search for: Ungaro, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds

    Contributors:

    Bousbih, F. (author) / Bouzid, S. B. (author) / Chtourou, R. (author) / Charfi, F. F. (author) / Harmand, J. C. (author) / Ungaro, G. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C ; 21 ; 251-254

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0928-4931

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1 / 660

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy

    Ben Bouzid, S. / Bousbih, F. / Chtourou, R. et al. | British Library Online Contents | 2004

    Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications

    Reyes, D.F. / Braza, V. / Gonzalo, A. et al. | British Library Online Contents | 2018

    DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions

    Kosa, Arpad / Stuchlikova, Lubica / Harmatha, Ladislav et al. | British Library Online Contents | 2018

    Raman scattering study of a GaAsN epitaxial layer

    Yu, G. Y. / Shen, Z. X. / Liu, L. et al. | British Library Online Contents | 2001

    Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

    Wang, T. S. / Tsai, J. T. / Lin, K. I. et al. | British Library Online Contents | 2008

    Back to top