Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy: Fid-Bau Portal

Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy

Ben Bouzid, S. / Bousbih, F. / Chtourou, R. / Harmand, J. C. / Voisin, P.

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Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy

Ben Bouzid, S. / Bousbih, F. / Chtourou, R. / Harmand, J. C. / Voisin, P.

Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy

Ben Bouzid, S. / Bousbih, F. / Chtourou, R. / Harmand, J. C. / Voisin, P.

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Title:

Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy

Contributors:

Ben Bouzid, S. (author) / Bousbih, F. (author) / Chtourou, R. (author) / Harmand, J. C. (author) / Voisin, P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 112 ; 64-68

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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