Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering: Fid-Bau Portal

Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering

Ryzhikov, A. S. / Vasiliev, R. B. / Rumyantseva, M. N. / Ryabova, L. I. / Dosovitsky, G. A. / Gilmutdinov, A. M. / Kozlovsky, V. F. / Gaskov, A. M.

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Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering

Ryzhikov, A. S. / Vasiliev, R. B. / Rumyantseva, M. N. / Ryabova, L. I. / Dosovitsky, G. A. / Gilmutdinov, A. M. / Kozlovsky, V. F. / Gaskov, A. M.

Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering

Ryzhikov, A. S. / Vasiliev, R. B. / Rumyantseva, M. N. / Ryabova, L. I. / Dosovitsky, G. A. / Gilmutdinov, A. M. / Kozlovsky, V. F. / Gaskov, A. M.

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Title:

Microstructure and electrophysical properties of SnO2, ZnO and In2O3 nanocrystalline films prepared by reactive magnetron sputtering

Contributors:

Ryzhikov, A. S. (author) / Vasiliev, R. B. (author) / Rumyantseva, M. N. (author) / Ryabova, L. I. (author) / Dosovitsky, G. A. (author) / Gilmutdinov, A. M. (author) / Kozlovsky, V. F. (author) / Gaskov, A. M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 96 ; 268-274

Publication date:

2002-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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