SIMS quantification of low concentration of nitrogen doped in silicon crystals: Fid-Bau Portal

SIMS quantification of low concentration of nitrogen doped in silicon crystals

Fujiyama, N. / Karen, A. / Sams, D. B. / Hockett, R. S. / Shingu, K. / Inoue, N.

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SIMS quantification of low concentration of nitrogen doped in silicon crystals

Fujiyama, N. / Karen, A. / Sams, D. B. / Hockett, R. S. / Shingu, K. / Inoue, N.

SIMS quantification of low concentration of nitrogen doped in silicon crystals

Fujiyama, N. / Karen, A. / Sams, D. B. / Hockett, R. S. / Shingu, K. / Inoue, N.

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Check availability in my library

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Document information

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Document information

Title:

SIMS quantification of low concentration of nitrogen doped in silicon crystals

Contributors:

Fujiyama, N. (author) / Karen, A. (author) / Sams, D. B. (author) / Hockett, R. S. (author) / Shingu, K. (author) / Inoue, N. (author)

Published in:

APPLIED SURFACE SCIENCE ; 203-204 ; 457-460

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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