Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine

Ryu, H. H. / Jeon, M. H. / Leem, J. Y. et al. | British Library Online Contents | 2006

Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Chan, S.-H. / Sze, S. M. / Chang, C.-Y. et al. | British Library Online Contents | 1994

Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells

Tu, C. W. / Mei, X. B. / Yan, C. H. et al. | British Library Online Contents | 1995

Chemical beam epitaxial growth of GaAs from tertiarybutylarsine and triethylgallium precursors

Ait-Lhouss, M. / Castao, J. L. / Piqueras, J. | British Library Online Contents | 1994

Molecular Beam Epitaxial Growth of Topological Insulators

Chen, X. / Ma, X. C. / He, K. et al. | British Library Online Contents | 2011