Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources: Fid-Bau Portal

Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Chan, S.-H. / Sze, S. M. / Chang, C.-Y. / Lee, W.-I.

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Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Chan, S.-H. / Sze, S. M. / Chang, C.-Y. / Lee, W.-I.

Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Chan, S.-H. / Sze, S. M. / Chang, C.-Y. / Lee, W.-I.

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Title:

Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Contributors:

Chan, S.-H. (author) / Sze, S. M. (author) / Chang, C.-Y. (author) / Lee, W.-I. (author)

Published in:

APPLIED SURFACE SCIENCE ; 82/83 ; 85

Publication date:

1994-01-01

Size:

85 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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