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Strain relaxation of InAs epilayer on GaAs under In-rich conditions

Cai, L. C. / Chen, H. / Bao, C. L. / Huang, Q. / Zhou, J. M.

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Strain relaxation of InAs epilayer on GaAs under In-rich conditions

Cai, L. C. / Chen, H. / Bao, C. L. / Huang, Q. / Zhou, J. M.

Strain relaxation of InAs epilayer on GaAs under In-rich conditions

Cai, L. C. / Chen, H. / Bao, C. L. / Huang, Q. / Zhou, J. M.

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Order at Subito €

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Document information

Title:

Strain relaxation of InAs epilayer on GaAs under In-rich conditions

Contributors:

Cai, L. C. (author) / Chen, H. (author) / Bao, C. L. (author) / Huang, Q. (author) / Zhou, J. M. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE LETTERS ; 22 ; 599-601

Publication date:

2003-01-01

Size:

3 pages

ISSN:

0261-8028

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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