Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Strain relaxation of InAs epilayer on GaAs under In-rich conditions
Strain relaxation of InAs epilayer on GaAs under In-rich conditions
Strain relaxation of InAs epilayer on GaAs under In-rich conditions
Cai, L. C. (Autor:in) / Chen, H. (Autor:in) / Bao, C. L. (Autor:in) / Huang, Q. (Autor:in) / Zhou, J. M. (Autor:in)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 22 ; 599-601
01.01.2003
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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