Deep levels reduction in (NH4)2S treated and annealed GaAs epilayer on Si substrate: Fid-Bau Portal

Deep levels reduction in (NH4)2S treated and annealed GaAs epilayer on Si substrate

Saravanan, S. / Soga, T. / Jimbo, T. / Umeno, M.

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Deep levels reduction in (NH4)2S treated and annealed GaAs epilayer on Si substrate

Saravanan, S. / Soga, T. / Jimbo, T. / Umeno, M.

Deep levels reduction in (NH4)2S treated and annealed GaAs epilayer on Si substrate

Saravanan, S. / Soga, T. / Jimbo, T. / Umeno, M.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Deep levels reduction in (NH4)2S treated and annealed GaAs epilayer on Si substrate

Contributors:

Saravanan, S. (author) / Soga, T. (author) / Jimbo, T. (author) / Umeno, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 84 ; 195 - 199

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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