A platform for research: civil engineering, architecture and urbanism
Determination of recombination lifetime in MOS structures by a sine voltage-sweep technique
Determination of recombination lifetime in MOS structures by a sine voltage-sweep technique
Determination of recombination lifetime in MOS structures by a sine voltage-sweep technique
Peykov, P. (author) / Diaz, T. (author) / Aceves, M. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 5 ; 515-518
2002-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Building and Room Acoustics Measurements with Sine-Sweep Technique
British Library Conference Proceedings | 2004
|Defect detection in concrete pile using impulse response measurements with sine sweep excitations
BASE | 2015
|Sweep coagulation: Structures, mechanisms and practice
Online Contents | 1999
|Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
British Library Online Contents | 2010
|