Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes: Fid-Bau Portal

Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Chung, G.Y. / Loboda, M.J. / Sundaresan, S.G. / Singh, R.

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Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Chung, G.Y. / Loboda, M.J. / Sundaresan, S.G. / Singh, R.

Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Chung, G.Y. / Loboda, M.J. / Sundaresan, S.G. / Singh, R.

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Check availability in my library

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Title:

Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Contributors:

Chung, G.Y. (author) / Loboda, M.J. (author) / Sundaresan, S.G. (author) / Singh, R. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.

Published in:

Silicon Carbide and Related Materials 2009 ; 905-908

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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