Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor: Fid-Bau Portal

Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor

Lee, J. / Yang, H. / Shin, H. / Kim, J. / Jeong, C. / Cho, B. / Chung, K. / Lee, E.

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Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor

Lee, J. / Yang, H. / Shin, H. / Kim, J. / Jeong, C. / Cho, B. / Chung, K. / Lee, E.

Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor

Lee, J. / Yang, H. / Shin, H. / Kim, J. / Jeong, C. / Cho, B. / Chung, K. / Lee, E.

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Title:

Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor

Contributors:

Lee, J. (author) / Yang, H. (author) / Shin, H. (author) / Kim, J. (author) / Jeong, C. (author) / Cho, B. (author) / Chung, K. (author) / Lee, E. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 18 ; 1441-1446

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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