High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon: Fid-Bau Portal

High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

Oktyabrsky, S. / Tokranov, V. / Yakimov, M. / Moore, R. / Koveshnikov, S. / Tsai, W. / Zhu, F. / Lee, J. C.

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High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

Oktyabrsky, S. / Tokranov, V. / Yakimov, M. / Moore, R. / Koveshnikov, S. / Tsai, W. / Zhu, F. / Lee, J. C.

High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

Oktyabrsky, S. / Tokranov, V. / Yakimov, M. / Moore, R. / Koveshnikov, S. / Tsai, W. / Zhu, F. / Lee, J. C.

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Document information

Title:

High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

Contributors:

Oktyabrsky, S. (author) / Tokranov, V. (author) / Yakimov, M. (author) / Moore, R. (author) / Koveshnikov, S. (author) / Tsai, W. (author) / Zhu, F. (author) / Lee, J. C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 272-276

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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