A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
CRYSTALLINE OXIDE THIN FILM, AMORPHOUS OXIDE THIN FILM, THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT
To provide a crystalline oxide thin film used in a thin film transistor.SOLUTION: A crystalline oxide thin film contains indium element (In), gallium element (Ga) and aluminum element (Al). The indium element, the gallium element and the aluminum element are within a composition range encircled by the following (R16), (R3), (R4) and (R17) in atom% ratio in In-Ga-Ala ternary composition diagram: In:Ga:Al=82:1:17 (R16), In:Ga:Al=90:1:9 (R3), In:Ga:Al=90:9:1 (R4), In:Ga:Al=82:17:1 (R17).SELECTED DRAWING: Figure 1
【課題】薄膜トランジスタに使用する結晶質酸化物薄膜を提供する。【解決手段】インジウム元素（Ｉｎ）、ガリウム元素（Ｇａ）及びアルミニウム元素（Ａｌ）を含有し、前記インジウム元素、前記ガリウム元素及び前記アルミニウム元素が、Ｉｎ−Ｇａ−Ａｌ三元系組成図において、原子％比で、下記（Ｒ１６）、（Ｒ３）、（Ｒ４）及び（Ｒ１７）で囲まれる組成範囲内にある結晶質酸化物薄膜。Ｉｎ：Ｇａ：Ａｌ＝８２：１：１７・・・（Ｒ１６）Ｉｎ：Ｇａ：Ａｌ＝９０：１：９・・・（Ｒ３）Ｉｎ：Ｇａ：Ａｌ＝９０：９：１・・・（Ｒ４）Ｉｎ：Ｇａ：Ａｌ＝８２：１７：１・・・（Ｒ１７）【選択図】図１
CRYSTALLINE OXIDE THIN FILM, AMORPHOUS OXIDE THIN FILM, THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT
To provide a crystalline oxide thin film used in a thin film transistor.SOLUTION: A crystalline oxide thin film contains indium element (In), gallium element (Ga) and aluminum element (Al). The indium element, the gallium element and the aluminum element are within a composition range encircled by the following (R16), (R3), (R4) and (R17) in atom% ratio in In-Ga-Ala ternary composition diagram: In:Ga:Al=82:1:17 (R16), In:Ga:Al=90:1:9 (R3), In:Ga:Al=90:9:1 (R4), In:Ga:Al=82:17:1 (R17).SELECTED DRAWING: Figure 1
【課題】薄膜トランジスタに使用する結晶質酸化物薄膜を提供する。【解決手段】インジウム元素（Ｉｎ）、ガリウム元素（Ｇａ）及びアルミニウム元素（Ａｌ）を含有し、前記インジウム元素、前記ガリウム元素及び前記アルミニウム元素が、Ｉｎ−Ｇａ−Ａｌ三元系組成図において、原子％比で、下記（Ｒ１６）、（Ｒ３）、（Ｒ４）及び（Ｒ１７）で囲まれる組成範囲内にある結晶質酸化物薄膜。Ｉｎ：Ｇａ：Ａｌ＝８２：１：１７・・・（Ｒ１６）Ｉｎ：Ｇａ：Ａｌ＝９０：１：９・・・（Ｒ３）Ｉｎ：Ｇａ：Ａｌ＝９０：９：１・・・（Ｒ４）Ｉｎ：Ｇａ：Ａｌ＝８２：１７：１・・・（Ｒ１７）【選択図】図１
CRYSTALLINE OXIDE THIN FILM, AMORPHOUS OXIDE THIN FILM, THIN FILM TRANSISTOR AND ELECTRONIC EQUIPMENT
結晶質酸化物薄膜、アモルファス酸化物薄膜、薄膜トランジスタ、及び電子機器
INOUE KAZUYOSHI (author) / SHIBATA MASATOSHI (author) / KAWASHIMA EMI (author) / SASAKI KENICHI (author) / YAO ATSUSHI (author)
2021-05-20
Patent
Electronic Resource
Japanese
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