Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices: Fid-Bau Portal

Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

Leung, B. H. / Fong, W. K. / Surya, C.

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Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

Leung, B. H. / Fong, W. K. / Surya, C.

Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

Leung, B. H. / Fong, W. K. / Surya, C.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

Contributors:

Leung, B. H. (author) / Fong, W. K. (author) / Surya, C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 212-213 ; 897-900

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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