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Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices
Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices
Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices
Leung, B. H. (Autor:in) / Fong, W. K. (Autor:in) / Surya, C. (Autor:in)
APPLIED SURFACE SCIENCE ; 212-213 ; 897-900
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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