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    Device-quality GaN-dielectric interfaces by 300degreeC remote plasma processing

    New search for: Bae, C.
    New search for: Rayner, G. B.
    New search for: Lucovsky, G.

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    Device-quality GaN-dielectric interfaces by 300degreeC remote plasma processing

    New search for: Bae, C.
    New search for: Rayner, G. B.
    New search for: Lucovsky, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Device-quality GaN-dielectric interfaces by 300degreeC remote plasma processing

    New search for: Bae, C.
    New search for: Rayner, G. B.
    New search for: Lucovsky, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Device-quality GaN-dielectric interfaces by 300degreeC remote plasma processing

    Contributors:

    Bae, C. (author) / Rayner, G. B. (author) / Lucovsky, G. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 216 ; 119-123

    Publication date:

    2003-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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