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Comparison of thermal and plasma oxidations for HfO2/Si interface

Hayashi, S. / Yamamoto, K. / Harada, Y. / Mitsuhashi, R. / Eriguchi, K. / Kubota, M. / Niwa, M.

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Comparison of thermal and plasma oxidations for HfO2/Si interface

Hayashi, S. / Yamamoto, K. / Harada, Y. / Mitsuhashi, R. / Eriguchi, K. / Kubota, M. / Niwa, M.

Comparison of thermal and plasma oxidations for HfO2/Si interface

Hayashi, S. / Yamamoto, K. / Harada, Y. / Mitsuhashi, R. / Eriguchi, K. / Kubota, M. / Niwa, M.

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Document information

Title:

Comparison of thermal and plasma oxidations for HfO2/Si interface

Contributors:

Hayashi, S. (author) / Yamamoto, K. (author) / Harada, Y. (author) / Mitsuhashi, R. (author) / Eriguchi, K. (author) / Kubota, M. (author) / Niwa, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 216 ; 228-233

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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