Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO2 interfaces

Huang, Jianqiu / Tea, Eric / Li, Guanchen et al. | British Library Online Contents | 2017

First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

Doi, K. / Nakamura, K. / Tachibana, A. | British Library Online Contents | 2003

Atomic structure of SiO2 at SiO2/Si interfaces

Hirose, K. / Nohira, H. / Sakano, K. et al. | British Library Online Contents | 2000

First-Principles Calculations of Metal/Oxide Interfaces: Effects of Interface Stoichiometry

Kohyama, M. / Tanaka, S. / Okazaki, K. et al. | British Library Online Contents | 2005

Electron capture kinetics at AlF3/SiO2 interfaces

Thurzo, I. / Kampen, T. U. / Zahn, D. R. et al. | British Library Online Contents | 2003