Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate: Fid-Bau Portal

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

Okui, Y. / Jacob, C. / Ohshima, S. / Nishino, S.

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Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

Okui, Y. / Jacob, C. / Ohshima, S. / Nishino, S.

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

Okui, Y. / Jacob, C. / Ohshima, S. / Nishino, S.

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Check availability in my library

Order at Subito €

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Document information

Title:

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

Contributors:

Okui, Y. (author) / Jacob, C. (author) / Ohshima, S. (author) / Nishino, S. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 209-212

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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