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Pendeo Epitaxial Growth of 3C-SiC on Si Substrates

Shoji, A. / Okui, Y. / Nishiguchi, T. / Ohshima, S. / Nishino, S.

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Pendeo Epitaxial Growth of 3C-SiC on Si Substrates

Shoji, A. / Okui, Y. / Nishiguchi, T. / Ohshima, S. / Nishino, S.

Pendeo Epitaxial Growth of 3C-SiC on Si Substrates

Shoji, A. / Okui, Y. / Nishiguchi, T. / Ohshima, S. / Nishino, S.

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Document information

Title:

Pendeo Epitaxial Growth of 3C-SiC on Si Substrates

Contributors:

Shoji, A. (author) / Okui, Y. (author) / Nishiguchi, T. (author) / Ohshima, S. (author) / Nishino, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 257-260

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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