A platform for research: civil engineering, architecture and urbanism
Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
Kamata, I. (author) / Tsuchida, H. (author) / Jikimoto, T. (author) / Miyanagi, T. (author) / Izumi, K. (author) / Bergman, P. / Janzen, E.
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Micropipe Dissociation through Thick n^+ Buffer Layer Growth
British Library Online Contents | 2009
|Dependence of Micropipe Dissociation on Surface Orientation
British Library Online Contents | 2004
|Growth of Low Micropipe Density SiC Wafers
British Library Online Contents | 2000
|Micropipe Healing in Liquid Phase Epitaxial Growth of SiC
British Library Online Contents | 2000
|Micropipe Formation Model via Surface Step Interaction
British Library Online Contents | 2002
|