High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers: Fid-Bau Portal

High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

Schoner, A. / Fujihira, K. / Kimoto, T. / Matsunami, H.

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High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

Schoner, A. / Fujihira, K. / Kimoto, T. / Matsunami, H.

High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

Schoner, A. / Fujihira, K. / Kimoto, T. / Matsunami, H.

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Document information

Title:

High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers

Contributors:

Schoner, A. (author) / Fujihira, K. (author) / Kimoto, T. (author) / Matsunami, H. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 387-390

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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