Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors: Fid-Bau Portal

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Roensch, S. / Hertel, S. / Reshanov, S. / Schoner, A. / Krieger, M. / Weber, H.B.

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Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Roensch, S. / Hertel, S. / Reshanov, S. / Schoner, A. / Krieger, M. / Weber, H.B.

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Roensch, S. / Hertel, S. / Reshanov, S. / Schoner, A. / Krieger, M. / Weber, H.B.

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Document information

Title:

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Contributors:

Roensch, S. (author) / Hertel, S. (author) / Reshanov, S. (author) / Schoner, A. (author) / Krieger, M. (author) / Weber, H.B. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 436-439

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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