Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement: Fid-Bau Portal

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Izumi, S. / Fujisawa, H. / Tawara, T. / Ueno, K. / Hiraoka, M.

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Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Izumi, S. / Fujisawa, H. / Tawara, T. / Ueno, K. / Hiraoka, M.

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Izumi, S. / Fujisawa, H. / Tawara, T. / Ueno, K. / Hiraoka, M.

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Title:

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Contributors:

Izumi, S. (author) / Fujisawa, H. (author) / Tawara, T. (author) / Ueno, K. (author) / Hiraoka, M. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 685-688

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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